Page 128 - 腐蚀与防护2024年第十一期

李 超, 等: 燃气管道两种极性排流器服役性能对比

极性排流器的正向导通阈值电压、 正向导通阻抗和 对比[ J ] . 腐蚀与防护, 2017 , 38 ( 3 ): 228-234.

反向抑制电压, 从而对极性排流器的服役性能进行 LIXX , DU YX , XINGLL , etal.Com p arisonofthe

预测, 因此未来极性排流器选型可以先对其进行实 p erformanceoffourdirectcurrentdecou p lers [ J ] .

Corrosion&Protection , 2017 , 38 ( 3 ): 228-234.
验室测试。
[ 4 ] 程海娟, 郭伟玲, 马琦璟, 等.GaN 基肖特基势垒二极

( 2 ) 1号极性排流器正向导通阈值电压高、 排
管的结构优化研究进展[ J ] . 半导体技术, 2022 , 47 ( 7 ):
流阻抗大, 2 号极性排流器阈值电压低、 排流阻抗
505-512.
小, 1号极性排流器排流量不及2号极性排流器, 2
CHENG H J , GUO W L , MA QJ , etal.Research
号极性排流器排流效果与直连排流地床相当, 排流
p ro g ress on structure o p timization of GaN-based

效果更好。 Schottk y barrier diodes [ J ] . Semiconductor

( 3 ) 1号极性排流器漏通电流波动幅值较小, Technolo gy , 2022 , 47 ( 7 ): 505-512.
日总漏流电量较小; 2 号极性排流器漏通电流波动 [ 5 ] 武鹏, 张 涛, 张 进 成, 等. 低 反 向 漏 电 自 支 撑 衬 底
幅值较大, 日总漏流电量较大; 1号极性排流器反向 AlGaN / GaN 肖特基二极管 [ J ] . 物理学报, 2022 , 71
绝缘性能更好。 ( 15 ): 305-311.

( 4 )两种极性排流器连接排流地床均对管道直 WUP , ZHANGT , ZHANGJC , etal.Investi g ationof

流干扰与交流干扰具有缓解作用, 且2号极性排流 AlGaN / GaNSchottk ybarrierdiodesonfree-standin g

GaNsubstrate withlow leaka g ecurrent [ J ] .Acta
器缓解效果更优。
Ph y sicaSinica , 2022 , 71 ( 15 ): 305-311.
参考文献: [ 6 ] 庄翔, 张超. 具有高电流密度的小电流沟槽肖特基势垒
二极管[ J ] . 半导体技术, 2022 , 47 ( 3 ): 199-204.
[ 1 ] 覃慧敏, 都业强, 吕超, 等. 埋地管道动态直流杂散电流
ZHUANG X , ZHANG C.A smallcurrenttrench

干扰评估及防护技术的研究现状[ J ] . 腐蚀与防护,
Schottk ybarrierdiodewithhi g hcurrentdensit y [ J ] .

2018 , 39 ( 6 ): 409-417 , 424.
SemiconductorTechnolo gy , 2022 , 47 ( 3 ): 199-204.

QIN H M , DU Y Q , LÜ C , etal .Researchstatusin [ 7 ] 高伟, 赵璐冰.SiCMOSFET 功率器件标准研究[ J ] . 标

assessmentandp rotectiontechni q uesofd y namicDC 准科学, 2021 ( 12 ): 79-84.

stra ycurrentinterferenceon buried p i p elines [ J ] . GAO W , ZHAO L B.Stud y on standardfor SiC

Corrosion&Protection , 2018 , 39 ( 6 ): 409-417 , 424.
MOSFET p owerdevice [ J ] .Standard Science , 2021
[ 2 ] 刘权, 葛艾天. 陕京管道交流干扰排流效果的影响因素
( 12 ): 79-84.

[ J ] . 腐蚀与防护, 2015 , 36 ( 10 ): 990-994. [ 8 ] 陈利, 陈瑞森.SGT MOSFET 的研究与进展[ J ] . 中国

LIUQ , GE A T.Affectin gfactorsofACinterference 集成电路, 2021 , 30 ( 4 ): 36-42 , 57.

draina g eeffectinShaan-Jin gp i p eline [ J ] .Corrosion&
CHENL , CHEN RS.Researchanddevelo p mentof

Protection , 2015 , 36 ( 10 ): 990-994. SGT MOSFET [ J ] .ChinaInte g ratedCircuit , 2021 , 30
[ 3 ] 李夏喜, 杜艳霞, 邢琳琳, 等. 四种交流排流器服役性能
( 4 ): 36-42 , 57.

Com p arisonofServicePerformance ofTwoPolarizedElectricDraina g ersinGasPi p eline

,
,
LIChao , RENYon g HUXuetao , QIANChen g TAIBaocan , YU Wenxian , YANGYan g

( Bei j in gGasGrou pCo. , Ltd. , Bei j in g 100035 , China )

Abstract : InordertoalleviatetheDCinterferenceofsubwa y , thecombinationofsacrificialanodesandp olarizedelectric

draina g ersisoftenusedinurban g as p i p elines.Theservice p erformanceoftwo p olarizedelectricdraina g ers , Schottk y diode+

ca p acitor+sur g e p rotectort yp e ( No.1 ) andmetaloxidesemiconductorfieldeffecttransistor ( MOSFET ) +ca p acitor+sur g e

p rotectort yp e ( No.2 ), wascom p aredusin g acombinationoflaborator y testin g andfieldtestin g .Theeffectandmechanismof

thetwo p olarizedelectricdraina g erunderthed y namicDCinterferenceandACinterferencewereobtainedthrou g hfieldtests.

Theresultsshowthatthep olarizedelectricdraina g erNo.1hadabetterdraina g eeffectthanthatofthep olarizedelectric

draina g erNo.2 , butthe p olarizedelectricdraina g erNo.2hadbetterreverseinsulationp erformancethanthatofthe p olarized

electric draina g erNo.1.Bothp olarized electricdraina g ersconnectin gwithdraina g ebedhadamiti g atin g effectonp i p elineDC

interferenceandACi nterference , andthe p olarizedelectricdraina g erNo.2hadabettermiti g atin g effectthanthatofNo.1.

Ke ywords : urban g as p i p eline ; p olarized electricdraina g er ; thresholdp otential ; fielda pp lication
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